for high energy physics and scintillation counting, 28mm(1?/8 inch) diameter, low profile, bialkali photocathode, 9?tage, head?n type characteristics (at 25 c) note: anode characteristics are measured with the voitage distribution ratio shown below. voltage dlstrlbutlon ratlo and supply voltage general maximum ratings (absolute maximum values) information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?014 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office. photomultiplier tube r3998-02 parameter min. unit cathode sensitivity anode sensitivity gain anode dark current (after 30 min storage in darkness) time response luminous (2856 k) radiant at 420 nm blue (cs 5-58 filter) luminous (2856 k) radiant at 420 nm anode pulse rise time electron transit time 60 50 90 85 10.5 120 1.1 10 5 1.3 10 6 2 4.4 32 a/lm ma/w a/lm-b a/lm a/w na ns ns 10 typ. max. parameter unit spectral response wavelength of maximum response photocathode window material dynode base suitabie socket materiai minimum effective area structure number of stages 300 to 650 420 bialkali 25 borosilicate glass box(3) and line(6) 9 14-pin glass base e678-14c (supplied) nm nm mm dia. description / value parameter unit supply voltage average anode current ambient temperature between anode and cathode between anode and last dynode 1500 250 0.1 -80 to +50 v dc v dc ma c value electrodes k dy1 g dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p ratio 3 1 1 1 1 1 1.5 1 1 1 1 suppiy voltage: 1000 v, k: cathode, dy: dynode, p: anode, g: grid
figure 1: typical spectral response tpmh1150e02 jul. 2014 ip figure 2: dimensional outline and basing diagram (unit: mm) figure 3: accessories (unit: mm) socket e678 14c (supplied) * hamamatsu also provides c11152 series high voltage power supply modules. d-type socket assembly e990-29 (sold separately) tpmha0114ea tacca0004ea tacca0215eb photomultiplier tube r3998-02 hamamatsu photonics k.k. hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fax: (1)908-231-12 18 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, fa x: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, tele phone: (44)1707-294888, fax: (44)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: torshamnsgatan 35 se-164 40 kista, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e -mail: info@hamamatsu.se italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39)02-93581733, fax: (39)02-93581741 e-mail: info@hamamatsu.it china: hamamatsu photonics (china) co., ltd.: b1201 jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china , telephone: (86)10-6586-6006, fax: (86)10-6586-2866 e-mail: hpc@hamamatsu.com.cn 7 2.5 26 11.6 30 35 44 19.1 9 25 2- 3.5 14 k g r4 dy3 2 r6 dy4 12 r2 dy1 1 r1 r3 dy2 13 r7 dy6 10 r5 dy5 3 r8 dy7 5 r9 p dy8 9 r10 c2 c1 dy9 6 r11 c3 8 7 signal output rg-174/u (black) power supply gnd awg22 (black) -hv awg22 (violet) pmt socket pin no. signal gnd 26.0 0.3 7 43.0 0.5 0.8 450 10 28.0 0.5 potting compound housing (insulator) r1 r2 to r6,r8 to r11 r7 c1 to c3 : 1 m ? : 330 k ? : 510 k ? : 10 nf 2- 3.5 44.0 0.3 35.0 0.3 30.0 0.3 tpmhb0204ea bottom view (basing diagram) faceplate photo- cathode 14 pin base 28.5 0.5 25 min. 60 2 13 max. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 g dy2 dy3 ic dy6 dy8 p dy9 dy7 dy5 ic dy4 dy1 k short pin 200 800 600 400 0.01 0.1 1 10 100 cathode radiant sensitivity (ma/w) quantum efficiency (%) wavelength (nm) cathode radiant sensitivity quantum efficiency
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